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PZTA29 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Applications requiring extremely high current gain at collector currents to 500mA
PZTA29
NPN Darlington Transistor
• This device designed for applications requiring extremely high
current gain at collector currents to 500mA.
• Sourced from process 03.
4
3
2
1 SOT-223
1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
100
100
12
800
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
V(BR)CES
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = 100µA, VBE = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 80V, IE = 0
VCE = 80V, VBE = 0
VEB = 10V, IC = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal characteristics
VCE = 5.0V, IC = 10mA
VCE = 5.0V, IC = 100mA
IC = 10mA, IB = 0.01mA
IC = 100mA, IB = 0.1mA
IC = 100mA, VCE = 5.0V
fT
Cobo
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
IC = 10mA, VCE = 5.0V, f = 100MHz
VCB = 1.0V, IE = 0, f = 1.0MHz
Min.
100
100
12
10,000
10,000
125
Units
V
V
V
mA
°C
Max
100
500
100
Units
V
V
V
nA
nA
nA
1.2
V
1.5
V
2.0
V
MHz
8.0
pF
©2005 Fairchild Semiconductor Corporation
1
PZTA29 Rev. A
www.fairchildsemi.com
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