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PN930_02 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier
PN930
NPN General Purpose Amplifier
• This device is designed for low noise, high gain, general purpose
applications at collector currents from 1µA to 50mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
Value
45
45
5.0
100
- 55 ~ 150
Units
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
ICES
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
Cob
Output Capacitance
hfe
Small Signal Current Gain
hib
Input Impedance
hrb
Voltage Feedback Ratio
hob
Output Admittance
NF
Noise Figure
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10nA, IC = 0
VCE = 5.0V
VCB = 45V, IE = 0
VCB = 45V, IE = 0
VCB = 45V, IE = 0, TA = 170°C
VEB = 5.0V, IC = 0
VCE = 5.0V, IC = 10µA
VCE = 5.0V, IC = 10µA, TA = -55°C
VCE = 5.0V, IC = 500µA
VCE = 5.0V, IC = 10mA
IC = 10mA, IB = 0.5mA
IC = 10mA, IB = 0.5mA
VCB = 5.0V, f = 1.0MHz
IC = 500µA, VCE = 5.0V, f = 20MHz
IC = 1.0mA, VCE = 5.0V, f = 1.0KHz
IC = 1.0mA, VCE = 5.0V, f = 1.0KHz
VCE = 5.0V, IC = 10µA
RG = 10KΩ, BW = 15.7KHz
Min. Max. Units
45
V
45
V
5.0
V
2.0
nA
10
nA
10
nA
10
µA
10
nA
10
300
20
150
600
1.0
V
0.6
1.0
V
8.0
pF
1.5
150
600
25
32
Ω
600
x10-6
1.0 µmho
3.0
dB
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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