PN918 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN RF Transistor

Discrete POWER & Signal
Technologies
PN918
MMBT918
C
C
BE
TO-92
SOT-23
Mark: 3B
E
B
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
15
V_CBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
3.0
I_C
Collector Current - Continuous
50
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN918
350
2.8
125
357
*MMBT918
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation