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| PN5134_02 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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PN5134
NPN General Purpose Amplifier
⢠This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
Value
10
20
3.5
500
- 55 ~ 150
Units
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage *
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO
V(BR)CES
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
ICBO
ICES
Collector Cut-off Current
Collector Cutoff Current
On Characteristics
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
IC = 10µA
VCB = 15V, IE = 0, TA = 65°C
VCB = 15V, IC = 0
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = 1.0V, IC = 10mA
VCE = 0.4V, IC = 30mA
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 3.3mA
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 3.3mA
Cob
Output Capacitance
hfe
Small Signal Current Gain
Switching Characteristics
VCB = 5.0V, f = 1.0MHz
IC = 10mA, VCE = 10V, f = 100MHz
ts
Storage Time
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
* Pulse Test: Pulse Width ⤠300ms, Duty Cycle ⤠2.0%
IC = IB1 = IB2 = 15mA
VCC = 3.0V, IC = 10mA
IB1 = 3.3mA
VCC = 3.0V, IC = 10mA
IB1 = IB2 = 3.3mA
Min. Max. Units
10
V
20
V
3.5
V
20
V
10
µA
0.4
µA
20
150
15
0.25
V
0.20
V
0.70
0.9
V
0.72
1.1
V
4.0
pF
2.5
18
ns
18
ns
14
ns
12
ns
18
ns
13
ns
13
ns
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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