PN4391 Datasheet, PDF (1/10 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

PN4391
PN4392
PN4393
MMBF4391
MMBF4392
MMBF4393
G
G
SD
TO-92
N-Channel Switch
S
SOT-23
D
Mark: 6J / 6K / 6G
NOTE: Source & Drain
are interchangeable
This device is designed for low level analog switching, sample
and hold circuits and chopper stabalized amplifiers. Sourced
from Process 51. See J111 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_GF
Forward Gate Current
T_J ,T_stg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
30
- 30
50
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN4391-4393
625
5.0
125
357
*MMBF4391-4393
350
2.8
556
Units
mW
mW/°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation