PN4303 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel General Purpose Amplifier

PN4303
N-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
• Sourced from process 52.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_GF
Forward Gate Current
T_J, T_STG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
30
-30
50
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS Gate-Source Breakdwon Voltage
I_GSS
Gate Reverse Current
V_GS(off)
Gate-Source Cutoff Voltage
On Characteristics
I_G = -1.0µA, V_DS = 0
V_GS = -10V, V_DS = 0
V_DS = 20V, I_D = 1.0nA
I_DSS
Zero-Gate Voltage Drain Current *
V_DS = -15V, V_GS = 0
Min. Max. Units
-30
V
-1.0
nA
-6.0
V
4.0
10
mA
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004