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| PN4258_02 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – PNP Switching Transistor | |||
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PN4258
PNP Switching Transistor
⢠This device is designed for very high speed saturated switching at
collector currents to 100mA.
⢠Sourced from process 65.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
Value
-12
-12
-4.5
-200
- 55 ~ 150
Units
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CES
VCEO(SUS)
V(BR)CBO
V(BR)EBO
ICES
Collector-Emitter Breakdown Voltage *
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = -100µA, VBE = 0
IC =- 3.0mA, IB = 0
IC = -100µA, IE = 0
IE = -100µA, IC = 0
VCE = -6.0V, VBE = 0
VCE = -6.0V, VBE = 0, TA = 65°C
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = -1.0mA, VCE = -0.5V
IC = -10mA, VCE = -3.0V
IC = -50mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
fT
Current Gain Bandwidth Product
IC = -10mA, VCE = -5.0V, f = 100MHz
IC = -10mA, VCE = -10V, f = 100MHz
Ciob
Input Capacitance
VBE = -0.5V, IC = 0, f = 1.0MHz
Ccb
Collector-Base Capacitance
VBE = -5.0V, IE = 0, f = 1.0MHz
Min.
-12
-12
-12
-4.5
15
30
30
-0.75
700
700
Max.
-0.01
-5.0
120
-0.15
-0.5
-0.95
-1.5
3.5
3.0
Units
V
V
V
V
µA
µA
V
V
V
V
MHz
MHz
pF
pF
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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