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PN4141_02 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier
PN4141
NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
- Continuous
500
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
IBL
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cutoff Current
On Characteristics
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 40V, VOB = 3.0V
VCB = 40V, VOB = 3.0V
VCE = 10V, IC = 100µA
VCE = 10V, IC = 1.0mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
VCE = 1.0V, IC = 150mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Cob
Output Capacitance
hfe
Small Signal Current Gain
Switching Characteristics
VCB = 10V, f = 100KHz
IC = 20mA, VCE = 20V, f = 100MHz
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
VCC = 30V, IC = 150mA
IB1 = 15mA, VOB(off) = 0.5V
VCC = 30V, IC = 150mA
IB1 = IB2 = 15mA
Min. Max. Units
30
V
60
V
5.0
V
50
nA
50
nA
35
50
75
100
300
30
50
0.4
V
1.6
V
1.3
V
2.6
V
8.0
pF
2.5
10
ns
40
ns
250
ns
2.5
60
ns
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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