PN3642_02 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

PN3642
NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* T_A=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
Value
45
60
5.0
500
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
mA
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
V_(BR)CEO Collector-Emitter Breakdown Voltage *
I_C = 10mA, I_B = 0
45
V_(BR)CBO Collector-Base Breakdown Voltage
I_C = 10µA, I_E = 0
60
V_(BR)EBO Emitter-Base Breakdown Voltage
I_E = 10µA, I_C = 0
5.0
I_CES
Collector Cut-off Current
V_CB = 50V, I_E = 0
V_CB = 50V, I_E = 0, T_A = 65°C
On Characteristics
h_FE
DC Current Gain
V_CE = 10V, I_C = 150mA
40
V_CE = 10V, I_C = 500mA
15
V_CE(sat) Collector-Emitter Saturation Voltage
I_C = 150mA, I_B = 15mA
Small Signal Characteristics
C_ob
Output Capacitance
h_fe
Small Signal Current Gain
G_pe
Amplifier Power Gain
η
Collector Efficientcy
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
V_CB = 10V, f = 140KHz
I_C = 50mA, V_CE = 5.0V, f = 100MHz 1.5
V_CE = 15V, I_C = 0, R_G = 140Ω
10
f = 30MHz, R_L = 260Ω
V_CE = 15V, I_C = 0, R_G = 140Ω
60
f = 30MHz, R_L = 260Ω
Max.
50
1.0
120
0.22
8.0
Units
V
V
V
nA
µA
V
pF
dB
%
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002