PN3640_01 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – PNP Switching Transistor

PN3640
MMBT3640
C
C
BE
TO-92
SOT-23
Mark: 2J
E
B
PNP Switching Transistor
This device is designed for very high speed saturated switching
at collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
I_C
Emitter-Base Voltage
Collector Current - Continuous
T_J, T_stg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
12
12
4.0
200
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN3640
350
2.8
125
357
*MMBT3640
225
1.8
556
Units
mW
mW /°C
°C/W
°C/W
 2001 Fairchild Semiconductor Corporation
PN3640/MMBT3640, Rev A