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| PN3569 Datasheet, PDF (1/3 Pages) Micro Electronics – NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |||
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PN3569
NPN General Purpose Amplifier
⢠This device is designed for use at general purpose amplifiers and
switches requiring collecor currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
Value
40
80
5.0
500
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage * IC = 30µA, IB = 0
40
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
80
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
5.0
ICBO
Collector Cutoff Current
VCB = 40V, IE = 0
IEBO
Emitter Cut-off Current
VEB = 4.0V, IC = 0
On Characteristics
hFE
DC Current Gain
VCE = 1V, IC = 150mA
100
VCE = 1V, IC = 30mA
100
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
VBE(on)
Base-Emitter On Voltage
IC = 150mA, VCE = 1V
Small Signal Characteristics
hfe
Small Signal current Gain
* Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2.0%
IC = 50mA, VCE = 10V, f = 10MHz 3.0
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Max. Units
V
V
50
nA
25
nA
300
0.25
V
1.1
V
30
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003
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