PN3568_02 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

PN3568
NPN General Purpose Amplifier
• This device is designed for general purpose, medium power amplifiers
and switches requiring collector currents to 500mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* T_A=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
Value
60
80
5.0
1.0
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
A
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
On Characteristics
I_C = 30mA, I_B = 0
I_C = 100µA, I_E = 0
I_E = 10µA, I_C = 0
V_CB = 40V, I_E = 0
V_CB = 40V, I_E = 0, T_A = 75°C
V_EB = 4V, I_C = 0
h_FE
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
V_BE(on) Base-Emitter On Voltage
Small Signal Characteristics
V_CE = 1.0V, I_C = 30mA
V_CE = 1.0V, I_C = 150mA
I_C = 150mA, I_B = 15mA
V_CE = 1.0V, I_C = 150mA
C_ob
Output Capacitance
C_ib
Input Capacitance
h_fe
Small Signal Current Gain
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
V_CB = 10V, f = 1.0MHz
V_EB = 0.5V, f = 1.0MHz
I_C = 50mA, V_CE = 10V, f = 20MHz
Min. Max. Units
60
V
80
V
5.0
V
50
nA
5.0
µA
25
nA
40
40
120
0.25
V
1.1
V
20
pF
80
3.0
30
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002