PN3568 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

PN3568
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for general purpose, medium power
amplifiers and switches requiring collector currents to 500 mA.
Sourced from Process 12. SeeTN3019A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
80
V_EBO
Emitter-Base Voltage
5.0
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
PN3568
625
5.0
83.3
200
Units
V
V
V
A
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation