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| PN3566 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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PN3566
NPN General Purpose Amplifier
⢠This device is for use as a medium amplifier and switch requiring
collector currents up 300mA.
⢠Sourced from process 19.
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
1
TO-92
1. Emitter 2. Base 3. Collector
Value
30
40
5
600
- 55 ~ 150
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage *
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = 30mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VEB = 5V, IC = 0
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage *
VBE(on) Base-Emitter On Voltage
Small Signal Characteristics
VCE = 10V, IC = 2.0mA
VCE = 10V, IC = 10mA
IC = 100mA, IB = 10mA
VCE = 1V, IC = 100mA
Cobo
Output Capacitance
* Pulse Test: Pulse Width ⤠300ms, Duty Cycle ⤠2.0%
VCB = 10V, IE = 0
Min. Typ. Max. Units
30
V
40
V
5
V
50 nA
10 µA
80
150
600
1.0 V
0.9 V
25 pF
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Max.
625
5
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
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