PN2907A Datasheet, PDF (1/7 Pages) NXP Semiconductors – PNP switching transistor

PN2907A
C
BE
TO-92
MMBT2907A
C
SOT-23
Mark: 2F
E
B
PZT2907A
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
V_CBO
V_EBO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
60
60
5.0
800
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Units
V
V
V
mA
°C
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
Max
PN2907A *MMBT2907A **PZT2907A
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
625
350
1,000
5.0
2.8
8.0
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
Units
mW
mW/°C
°C/W
°C/W
 1998 Fairchild Semiconductor Corporation