PN2484 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Discrete POWER & Signal
Technologies
PN2484
MMBT2484
C
C
BE
TO-92
SOT-23
Mark: 1U
E
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µ to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
60
V_CBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5.0
IC
Collector Current - Continuous
100
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
PN2484
625
5.0
83.3
200
*MMBT2484
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation