PN2369A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN Switching Transistor

Discrete POWER & Signal
Technologies
PN2369A
MMBT2369A MMPQ2369
C
BE
TO-92
C
SOT-23
Mark: 1S
E
B
EB
EB
EB
EB
CC
CC
CC
C
C
SOIC-16
NPN Switching Transistor
This device is designed for high speed saturation switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
15
V_CBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
4.5
I_C
Collector Current - Continuous
200
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
PN2369A
350
2.8
125
357
Max
MMBT2369A*
225
1.8
556
MMPQ2369
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation