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| PN2369 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistors | |||
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PN2369
NPN Switching Transistor
⢠This device is designed for high speed saturated switching at collector
currents of 10mA to 100mA.
⢠Sourced from process 21.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
15
40
4.5
200
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = 10mA, IB = 0
IC = 10µA, VBE = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C
hFE
DC Current Gain *
VCE(sat) Collector-Emitter Saturation Voltage *
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 1.0mA
Cobo
Cibo
hfe
Output Capacitance
Input Capacitance
Small -Signal Current Gain
VCB = 5.0V, IE = 0, f = 1.0MHz
VEB = 0.5V, IC = 0, f = 1.0MHz
IC = 10mA, VCE = 10V, RG = 2.0kâ¦,
f = 100MHz
Switching Characteristics
ts
Storage Time
ton
Turn-On Time
toff
Turn-Off Time
* Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2.0%
IB1 = IB2 = IC = 10mA
VCC = 3.0V, IC = 10mA, IB1 = 3.0mA
VCC = 3.0V, IC = 10mA, IB1 = 3.0mA,
IB2 = 1.5mA
Min.
15
40
40
4.5
40
20
0.7
5.0
Max.
0.4
30
120
0.25
0.85
4.0
5.0
13
12
18
Units
V
V
V
V
µA
µA
V
V
pF
pF
ns
ns
ns
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
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