PN2222A Datasheet, PDF (1/6 Pages) NXP Semiconductors – NPN switching transistor

PN2222A
MMBT2222A PZT2222A
C
BE
TO-92
C
SOT-23
Mark: 1P
E
B
C
SOT-223
E
C
B
MMPQ2222
B4
E4
B3
E3
B2
E2
B1
E1
C4
C4
C3
C3
C2
C2
SOIC-16
C1
pin #1 ^C1
NMT2222
C2
E1
C1
SOT-6
Mark: .1B
B2
E2
B1
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Pro-
cess 19.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
40
V_CBO
Collector-Base Voltage
75
V_EBO
Emitter-Base Voltage
6.0
I_C
Collector Current - Continuous
1.0
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
 1997 Fairchild Semiconductor Corporation