PN2222 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Transistor

PN2222
General Purpose Transistor
NPN Epitaxial Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
Collector-Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V_CE (sat) * Collector-Emitter Saturation Voltage
V_BE (sat) * Base-Emitter Saturation Voltage
f_T
Current Gain Bandwidth Product
C_ob
Output Capacitance
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
I_C=10µA, I_E=0
I_C=10mA, I_B=0
I_E=10µA, I_C=0
V_CB=50V, I_E=0
V_EB=3V, I_C=0
V_CE=10V, I_C=0.1mA
V_CE=10V, *I_C=150mA
I_C=500mA, I_B=50mA
I_C=500mA, I_B=50mA
V_CE=20V, I_C=20mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
Value
60
30
5
600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Min.
60
30
5
35
100
300
Max.
0.01
10
300
1
2
8
Units
V
V
V
µA
nA
V
V
MHz
pF
©2004 Fairchild Semiconductor Corporation
Rev. A, November 2004