PN200_01 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

PN200
PN200A
MMBT200
MMBT200A
C
C
BE
TO-92
E
SOT-23
B
Mark: N2 / N2A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
45
60
6.0
500
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN200
PN200A
625
5.0
83.3
200
*MMBT200
*MMBT200A
350
2.8
357
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
 1997 Fairchild Semiconductor Corporation