PN100 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Discrete POWER & Signal
Technologies
PN100
PN100A
MMBT100
MMBT100A
C
C
BE
TO-92
E
SOT-23
B
Mark: NA / NA1
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC
Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN100A
625
5.0
83.3
200
*MMBT100A
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation