PF5102_11 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel Switch

PF5102
N-Channel Switch
December 2011
Features
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabilized amplifiers.
• Sourced from process 51.
• See J111 for characteristics.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_DG
Drain-Gate Voltage
40
V
V_GS
Gate-Source Voltage
-40
V
I_GF
Forward Gate Current
50
mA
T_J, T_STG Operating and Storage Junction Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
P_D
R_θJC
R_θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS
I_GSS
Gate-Source Breakdown Voltage
Gate Reverse Current
V_GS(off) Gate-Source Cutoff Voltage
V_GS(f)
Gate-Source Forward Voltage
On Characteristics
I_G = -1.0μA, V_DS = 0
V_GS = -15V, V_DS = 0
V_GS = -15V, V_DS = 0, T_A = 125°C
V_DS = 15V, I_D = 1.0nA
I_G = 1.0mA, V_DS = 0
I_DSS
Zero-Gate Voltage Drain Current * V_DS = 15V, V_GS = 0
Small Signal Characteristics
g_fs
Forward Transfer Conductance V_DS = 15V, V_GS = 0, f = 1.0KHz
g_oss
Output Conductance
V_DS = 15V, I_D = 500μA, f = 1.0KHz
C_iss
Input Capacitance
V_DG = 15V, V_GS = 0, f = 1.0MHz
C_rss
Reverse Transfer Capacitance V_DG = 15V, V_GS = 0, f = 1.0MHz
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.0%
Min.
-40
-0.7
4.0
11,000
Units
mW
mW/°C
°C/W
°C/W
Max. Units
V
-1.0
nA
-0.2
μA
-1.6
V
1.0
V
20
mA
μmhous
25 μmhous
16
pF
6
pF
© 2011 Fairchild Semiconductor Corporation
PF5102 Rev. B0
1
www.fairchildsemi.com