NZT753 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP Current Driver Transistor

NZT753
PNP Current Driver Transistor
• This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P.
4
3
2
1 _SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T_A=25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
- 100
V_CBO
Collector-Base Voltage
- 120
V_EBO
Emitter-Base Voltage
- 5.0
I_C
Collector Current
- Continuous
- 4.0
T_J, T_STG
Operating and Storage Junction Temperature Range
- 55 ~ +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BV_CEO
BV_CBO
BV_EBO
I_CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
I_EBO
Emitter-Base Cutoff Current
On Characteristics *
I_C = -10mA, I_B = 0
I_C = -100µA, I_E = 0
I_E = -100µA, I_C = 0
V_CB = -100V, I_E = 0
T_A = 100°C
V_EB = -4V, I_C = 0
h_FE
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
V_BE(sat) Base-Emitter Saturation Voltage
V_BE(on)
Base-Emitter On Voltage
Small Signal Characteristics
V_CE = -2.0V, I_C = -50mA
V_CE = -2.0V, I_C = -500mA
V_CE = -2.0V, I_C = -1.0A
I_C = -1.0A, I_C = -50mA
I_C = -1.0A, I_B = -100mA
V_CE = -2.0V, I_C = -1.0A,
f_T
Transition Frequency
*Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CE = -5V, I_C = -100mA, f = 100MHz
Min.
-100
-120
-5.0
70
100
55
75
Thermal Characteristics * T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25C
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min 6cm².
Max.
1.2
9.7
103
Units
V
V
V
A
°C
Max.
-0.1
-10
-0.1
Units
V
V
V
µA
µA
µA
300
-0.3
-1.25
-1.0
V
V
V
MHz
Units
W
mW/°C
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003