NZT749 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP Current Driver Transistor

NZT749
PNP Current Driver Transistor
• This device is designed for power amplifier, regulator and switching
circuit where speed is important.
• Sourced from process 5P.
4
3
2
1
SOT-223
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current (DC)
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1. Base 2, 4. Collector 3. Emitter
Value
-25
-35
-5.0
-4.0
- 55 ~ 150
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
Collector-Emitter Voltage
V_(BR)CBO
Collector-Base Voltage
V_(BR)EBO
Emitter-Base Voltage
I_CBO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
On Characteristics *
I_C = -10mA, I_B = 0
I_C = -100µA, I_E = 0
I_E = -10µA, I_C = 0
V_CB = -30V, I_E = 0
V_EB = -4V, I_C = 0
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(sat)
Base-Emitter Saturation Voltage
V_BE(on)
Base-Emitter On Voltage
Small Signal Characteristics
V_CE = -2.0V, I_C = -50mA
V_CE = -2.0V, I_C = -1.0A
V_CE = -2.0V, I_C = -2.0A
I_C = -1.0A, I_B = -100mA
I_C = -1.0A, I_B = -100mA
I_C = -1.0A, V_CE = -2.0V
f_T
Current gain Bandwidth Product
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CE = -5.0V, I_C = -50mA
f = 100MHz
Min. Max. Units
-25
V
-35
V
-5.0
V
-100
nA
-0.1
µA
70
80
300
65
-0.3
V
-1.25
V
-1.0
V
75
MHz
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Max.
P_D
Total Device Dissipation
1.2
Derate above 25°C
9.7
R_θJA
Thermal Resistance, Junction to Ambient
103
Units
W
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, July 2004