NZT6727 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

NZT6727
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collecor currents to 1.0A.
• Sourced from process 77.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
Value
-40
-50
-5.0
-1.5
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
V_(BR)CEO
Collector-Emitter Sustaining Voltage * I_C = -10mA, I_B = 0
-40
V_(BR)CBO
Collector-Base Breakdown Voltage
I_C = -1.0mA, I_E = 0
-50
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_E = -100µA, I_C = 0
-5.0
I_CBO
Collector Cutoff Current
V_CB = -50V, I_E = 0
I_EBO
Emitter Cut-off Current
V_EB = -5.0V, I_C = 0
On Characteristics
h_FE
DC Current Gain
I_C = -10mA, V_CE = -1.0V
55
I_C = -100mA, V_CE = -1.0
60
I_C = -1.0A, V_CE = -1.0V
50
V_CE(sat)
Collector-Emitter Saturation Voltage
I_C = -1.0A, I_B = -100mA
V_BE(on)
Base-Emitter On Voltage
I_C = -1.0A, V_CE = -1.0V
Small Signal Characteristics
h_fe
Small Signal current Gain
C_cb
Collector-Base Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
I_C = -50mA, V_CE = -10V, f = 20MHz 2.5
V_CB = -10V, I_E = 0, f = 1.0MHz
Max.
-0.1
-0.1
250
-0.5
-1.2
25
30
Units
V
V
V
µA
µA
V
V
pF
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm².
Max.
1.0
8.0
125
Units
W
mW/°C
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003