NZT660_05 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

April 2005
NZT660/NZT660A
PNP Low Saturation Transistor
• These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
4
3
2
1 _SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
NZT660
NZT660A
Units
V_CEO
Collector-Emitter Voltage
60
60
V
V_CBO
Collector-Base Voltage
80
60
V
V_EBO
Emitter-Base Voltage
5
5
V
I_C
Collector Current
- Continuous
3
3
A
T_J, T_STG
Operating and Storage Junction Temperature Range
- 55 ~ +150
- 55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BV_CEO
Collector-Emitter Breakdown Voltage I_C = 10mA
60
BV_CBO
Collector-Base Breakdown Voltage
I_C = 100µA
NZT660
80
NZT660A
60
BV_EBO
Emitter-Base Breakdown Voltage
I_E = 100µA
5
I_CBO
Collector-Base Cutoff Current
V_CB = 30V
V_CB = 30V, T_A = 100°C
I_EBO
Emitter-Base Cutoff Current
V_EB = 4V
On Characteristics *
h_FE
DC Current Gain
I_C = 100mA, V_CE = 2V
I_C = 500mA, V_CE = 2V
I_C = 1A, V_CE = 2V
I_C = 3A, V_CE = 2V
70
NZT660 ₁₀₀
NZT660A ₂₅₀
80
25
V
V
V
V
100
nA
10
µA
100
nA
300
550
©2005 Fairchild Semiconductor Corporation
1
NZT660/NZT660A Rev. C3
www.fairchildsemi.com