 English |
|
|
|
|
|
|
|
| NZT605 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN Darlington Transistor | |||
| |||
|
NZT605
NPN Darlington Transistor
⢠This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
⢠Sourced from process 06.
4
3
2
1
SOT-223
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1. Base 2.4. Collector 3. Emitter
Value
110
140
10
1.5
- 55 ~ +150
Units
V
V
V
A
°C
NOTES:
1. These ratings are baseed on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics *
IC = 10mA, IB = 0
IC = 100µA, IE = 0
IE = 100µA, IC = 0
VCB = 120V, IE = 0
VCE = 120V, IE = 0
VEB = 8.0V, IC = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = 50mA, VCE = 5.0V
IC = 500mA, VCE = 5.0V
IC = 1.0A, VCE = 5.0V
IC = 2.0A, VCE = 5.0V
IC = 250mA, IB = 0.25mA
IC = 1.0A, IB = 1.0mA
IC = 1.0A, IB = 1.0mA
IC = 1.0A, VCE = 5.0V
fT
Transition Frequency
IC = 100mA, VCE = 10V, f = 20MHz
Min.
110
140
10
2000
5000
2000
500
150
Max.
10
10
100
100K
1
1.5
1.8
1.7
Units
V
V
V
nA
nA
nA
V
V
V
MHz
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 36mm à 18mm à 1.5mm; mounting pad for the collector lead min. 6cm2
Max.
1,000
8.0
125
Units
mW
mW/°C
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese