NZT560A_09 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Low Saturation Transistor

NZT560/NZT560A
NPN Low Saturation Transistor
May 2009
Features
2
• These devices are designed with high current gain and low saturation voltage with
collector currents up to 3A continuous.
3
2
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T_A=25°C unless otherwise noted
Symbol
V_CEO
V_CBO
V_EBO
I_C
T_J, T_STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Ratings
60
80
5
3
- 55 to +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150°C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
R_θJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max.
NZT560
NZT560A
1
125
Units
W
°C/W
© 2009 Fairchild Semiconductor Corporation
NZT560/NZT560A Rev. D1
1
www.fairchildsemi.com