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NZD560A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN Low Saturation Transistor
NZD560A
NPN Low Saturation Transistor
• These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
• Sourced from process NA.
1
D-PAK
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
55
80
5
3
- 55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operation.
Units
V
V
V
A
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCEO
BVCBO
BVEBO
ICBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Base Cutoff Current
IEBO
Emitter-Base Cutoff Current
On Characteristics *
IC = 10mA, IB = 0
55
IE = 100µA, IE = 0
80
IE = 100µA, IC = 0
5
VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = 100°C
VEB = 4V, IC = 0
V
V
V
100 nA
10 µA
10 nA
hFE
DC Current Gain
IC = 100mA, VCE = 2V
70
IC = 500mA, VCE = 2V
250
550
IC = 1A, VCE = 2V
80
IC = 3A, VCE = 2V
25
IC = 1A, VCE = 3V
200
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1A, IB = 100mA
IC = 2A, IB = 200mA
IC = 1A, IB = 8mA
300 mV
400 mV
1.5 V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 100mA
IC = 1A, IB = 8mA
1.25 V
1
V
VBE(on)
Base-Emitter On Voltage
IC = 1A, VCE = 2V
1
V
Small Signal Characteristics
Cobo
fT
Output Capacitance
Transition Frequency
* Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2.0%
VCB = 10V, IE = 0, f = 1MHz
IC = 100mA, VCE = 5V,
75
f = 100MHz
30 pF
MHz
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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