NDT453N Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

September 1996
NDT453N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
Features
8A, 30V. R_DS(ON) = 0.028Ω @ V_GS = 10V.
R_DS(ON) = 0.042Ω @ V_GS = 4.5V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
D
D
G
D
S
Absolute Maximum Ratings
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation
T_A= 25°C unless otherwise not
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
G
S
NDT453N
30
±20
±8
±15
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT453N Rev. D1