NDT451AN_09 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

February 2009
NDT451AN
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss,
and resistance to transients are needed.
7.2A, 30V. R_DS(ON) = 0.035Ω @ V_GS = 10V
R_DS(ON) = 0.05Ω @ V_GS = 4.5V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
G
D
S
Absolute Maximum Ratings
Symbol Parameter
T_A= 25°C unless otherwise noted
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
@ 2009 Fairchild Semiconductor Corporation
NDT451AN
30
± 20
± 7.2
± 25
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT451AN Rev. D1