NDT2955_02 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel Enhancement Mode Field Effect Transistor

April 2002
NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description
This 60V P-Channel MOSFET is produced using
Fairchild Semiconductor’s high voltage Trench process.
It has been optimized for power management
plications.
Applications
• DC/DC converter
• Power management
Features
• –2.5 A, –60 V. RDS(ON) = 300mΩ @ VGS = –10 V
RDS(ON) = 500mΩ @ VGS = –4.5 V
• High density cell design for extremely low RDS(ON)
• High power and current handling capability in a widely
used surface mount package.
D
D
S
SOT-22 3
D
G
G
D
S
D
D
S
SOT-223* ^G
G
S
(J2 3 Z )
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
NDT2955
NDT2955
13’’
Ratings
–60
±20
–2.5
–15
3.0
1.3
1.1
–55 to +150
42
12
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
NDT2955 Rev. C