NDS9953A Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode Field Effect Transistor

NDS9953A
Dual P-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
Features
-2.9A, -30V. R_DS(ON) = 0.13Ω @ V_GS = -10V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
________________________________________________________________________________
Absolute Maximum Ratings
Symbol Parameter
T_A= 25°C unless otherwise noted
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
5
6
7
8
NDS9953A
-30
± 20
± 2.9
± 10
2
1.6
1
0.9
-55 to 150
78
40
© 1997 Fairchild Semiconductor Corporation
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
NDS9953A.SAM