NDS9952A Datasheet, PDF (1/13 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

February 1996
NDS9952A
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
notebook computer power management and other
battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
N-Channel 3.7A, 30V, R_DS(ON)=0.08Ω @ V_GS=10V.
P-Channel -2.9A, -30V, R_DS(ON)=0.13Ω @ V_GS=-10V.
High density cell design or extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings
Symbol Parameter
T_A= 25°C unless otherwise noted
N-Channel
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
30
± 20
± 3.7
± 15
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
© 1997 Fairchild Semiconductor Corporation
2
1.6
1
0.9
-55 to 150
78
40
P-Channel
-30
± 20
± 2.9
± 10
Units
V
V
A
W
°C
°C/W
°C/W
NDS9952A.SAM