NDS9948_02 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual 60V P-Channel PowerTrench MOSFET

May 2002
NDS9948
Dual 60V P-Channel PowerTrench^ MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –2.3 A, –60 V
RDS(ON) = 250 mΩ @ VGS = –10 V
RDS(ON) = 500 mΩ @ VGS = –4.5 V
• Low gate charge (9nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D^D1
D^D1
D^D2
D^D2
SO-8
Pin 1 ^SO-8
S_S2G^S2SS1GG1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
NDS9948
NDS9948
13’’
2002 Fairchild Semiconductor Corporation
5
6
Q1
7
Q2
8
Ratings
–60
±20
–2.3
–10
2
1.6
1.0
0.9
–55 to +175
78
135
40
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
NDS9948 Rev B(W)