NDS9947_02 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual 20V P-Channel PowerTrench MOSFET

May 2002
NDS9947
Dual 20V P-Channel PowerTrench^ MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (–4.5V to – 20V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –3.5 A, –20 V
RDS(ON) = 100 mΩ @ VGS = –10 V
RDS(ON) = 190 mΩ @ VGS = –4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D^D1
D^D1
D^D2
D^D2
SO-8
Pin 1 ^SO-8
S_S2G^S2SS1GG1
5
4
6
Q1
3
7
2
Q2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
NDS9947
NDS9947
13’’
Ratings
–20
±20
–3.5
–15
2
1.6
1.0
0.9
–55 to +175
78
135
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
NDS9947 Rev B(W)