NDS9933A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode Field Effect Transistor

January 1999
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field ef-
fect transistor is produced using Fairchild’s propri-
etary, high cell density, DMOS technology. This very
high density process is especially tailored to mini-
mize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage
apllications such as DC motor control and DC/
DC conversion where fast switching,low in-line
power loss, and resistance to transients are
needed.
Features
• -2.8 A, -20 V. R_DS(on) = 0.14 Ω @ V_GS = -4.5 V
R_DS(on) = 0.19 Ω @ V_GS = -2.7 V
R_DS(on) = 0.20 Ω @ V_GS = -2.5 V.
• High density cell design for extremely low R_DS(on).
• High power and current handling capability in a
widely used surface mount package.
• Dual MOSFET in surface mount package.
D2
D2
D1
D1
SO-8
G1
S2
G1
S1
5
4
6
3
7
2
8
1
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
NDS9933A
NDS9933A
13’’
©1999 Fairchild Semiconductor Corporation
NDS9933A
-20
±⁸
-2.8
-10
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°^C
78
°^C/W
40
°^C/W
Tape Width
12mm
Quantity
2500 units
NDS9933A Rev. A