NDS9925A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode Field Effect Transistor

May 1998
NDS9925A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
4.5 A, 20 V. R_DS(ON) = 0.060 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.075 Ω @ V_GS = 2.7 V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
D2
D2
D1
D1
N9D9S25A
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
SOIC-16
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
NDS9925A
20
±8
4.5
15
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
NDS9925A Rev. A