NDS9410A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single N-Channel Enhancement Mode Field Effect Transistor

April 2000
NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transients are needed.
Features
• 7.3 A, 30 V.
RDS(ON) = 28 mΩ @ VGS = 10 V
RDS(ON) = 42 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability in a
widely used surface mount package.
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
NDS9410A
NDS9410A
13’’
5
6
7
8
Ratings
30
±20
7.3
20
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
NDS9410A Rev B(W)