NDS9407_02 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 60V P-Channel PowerTrench MOSFET

May 2002
NDS9407
60V P-Channel PowerTrench^ MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –3.0 A, –60 V.
RDS(ON) = 150 mΩ @ VGS = –10 V
RDS(ON) = 240 mΩ @ VGS = –4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 ^SS ^{SS SS GG}
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
NDS9407
NDS9407
13’’
Ratings
–60
±20
–3.0
–12
2.5
1.2
1.0
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
NDS9407 Rev B1(W)