NDS8958 Datasheet, PDF (1/13 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

July 1996
NDS8958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
N-Channel 5.3A, 30V, R_DS(ON)=0.035Ω @ V_GS=10V.
P-Channel -4.0A, -30V, R_DS(ON)=0.065Ω @ V_GS=-10V.
High density cell design or extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings
Symbol Parameter
T_A= 25°C unless otherwise noted
N-Channel
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
30
20
(Note 1a)
5.3
20
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
2
1.6
1
0.9
-55 to 150
78
40
P-Channel
-30
-20
-4
-15
Units
V
V
A
W
°C
°C/W
°C/W
NDS8958 Rev. C