NDS8435 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Single P-Channel Enhancement Mode Field Effect Transistor

May 1996
NDS8435
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-7A, -30V. R_DS(ON) = 0.028Ω @ V_GS = -10V
R_DS(ON) = 0.045Ω @ V_GS = -4.5V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDS8435
-30
-20
-7
-25
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS8435 Rev. B2