NDS8410A_04 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single 30V N-Channel PowerTrench MOSFET

October 2004
NDS8410A
Single 30V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET are produced using
Fairchild’s proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage applications such
as notebook computer power management and other
battery powered circuits where fast switching, low in-
line power loss, and resistance to transients are
needed.
Features
• 10.8 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 17 mΩ @ VGS = 4.5 V
• Ultra-low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 ^SS ^{SS SS GG}
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
NDS8410A
NDS8410A
13’’
Ratings
30
±20
10.8
50
2.5
1.2
1.0
–55 to +150
50
25
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
©2004 Fairchild Semiconductor Corporation
NDS8410A Rev D1(W)