NDS335N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Logic Level Enhancement Mode Field Effect Transistor

July 1996
NDS335N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N -Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast switching,
and low in-line power loss are needed in a very small outline
surface mount package.
Features
1.7 A, 20 V. R_DS(ON) = 0.14 Ω @ V_GS= 2.7 V
R_DS(ON) = 0.11 Ω @ V_GS= 4.5 V.
Industry standard outline SOT-23 surface mount package
using poprietary SuperSOT^TM-3 design for superior thermal
and electrical capabilities.
High density cell design for extremely low R_DS(ON).
Exceptional on-resistance and maximum DC current
capability.
________________________________________________________________________________
D
Absolute Maximum Ratings
Symbol Parameter
T_A = 25°C unless otherwise noted
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous (Note 1a)
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
© 1997 Fairchild Semiconductor Corporation
G
S
NDS335N
20
8
1.7
10
0.5
0.46
-55 to 150
250
75
Units
V
V
A
W
°C
°C/W
°C/W
NDS335 Rev.C