NDP6060 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

March 1996
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
48A, 60V. R_DS(ON) = 0.025Ω @ V_GS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R_DS(ON).
TO-220 and TO-263 (D²PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
T_C = 25°C unless otherwise noted
NDP6060
V_DSS
Drain-Source Voltage
V_DGR
Drain-Gate Voltage (R_GS < 1 MΩ)
V_GSS
Gate-Source Voltage - Continuous
- Nonrepetitive (t_P < 50 µs)
I_D
Drain Current - Continuous
T_c=25^oC
- Continuous
T_C=100^oC
- Pulsed
P_D
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
T_J,T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
60
60
± 20
± 40
48
32
144
100
0.67
-65 to 175
275
NDB6060
Units
V
V
V
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP6060 Rev. B1 / NDB6060 Rev. C