NDH854P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel Enhancement Mode Field Effect Transistor

May 1997
NDH854P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
SuperSOT^TM-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
-5.1 A, -30 V. R_DS(ON) = 0.032 Ω @ V_GS = -10 V
R_DS(ON) = 0.052 Ω @ V_GS = -4.5V.
Proprietary SuperSOT^TM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R_DS(ON).
Exceptional on-resistance and maximum DC current
capability.
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5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDH854P
-30
±20
-5.1
-15
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
NDH854P Rev.D