NDH853N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

NDH853N
N-Channel Enhancement Mode Field Effect Transistor
May 1997
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as battery powered
circuits or portable electronics where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
7.6 A, 30 V. R_DS(ON) = 0.017 Ω @ V_GS = 10 V
R_DS(ON) = 0.025 Ω @ V_GS = 4.5 V.
High density cell design for extremely low R_DS(ON).
Proprietary SuperSOT^TM-8 small outline surface mount
package with high power and current handling capability.
___________________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
NDH853N
30
±20
7.6
23
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH853N Rev. C