NDH833N Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

February 1997
NDH833N
N-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOT^TM-8 N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
battery powered circuits or portable electronics where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
7.1 A, 20 V. R_DS(ON) = 0.020 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.025 Ω @ V_GS = 2.7 V.
Proprietary SuperSOT^TM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R_DS(ON).
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise note
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDH833N
20
±8
7.1
24
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH833N Rev. C