NDH831N Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

July 1996
NDH831N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and portable electronics where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
5.8A, 20V. R_DS(ON) = 0.03Ω @ V_GS = 4.5V
R_DS(ON) = 0.04Ω @ V_GS = 2.7V.
High density cell design for extremely low R_DS(ON).
Enhanced SuperSOT^TM-8 small outline surface mount
package with high power and current handling capability.
____________________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDH831N
20
8
5.8
20
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
NDH831N Rev. D